Double-sided monolithically integrated optoelectronic module with temperature compensation
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United States of America Patent
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Nov 13, 2012
Grant Date -
Nov 19, 2009
app pub date -
Jul 24, 2009
filing date -
Apr 25, 2006
priority date (Note) -
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Abstract
An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.
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