Method for processing a substrate using a single phase proximity head having a controlled meniscus

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United States of America Patent

PATENT NO 8313580
APP PUB NO 20110265823A1
SERIAL NO

13184475

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for processing a substrate is provided. The method includes generating a controlled meniscus using a proximity head. The proximity head has a face in close proximity to a surface of the substrate, and the face includes a substantially flat surface. The controlled meniscus is generated by delivering a chemical to the meniscus through discrete nozzles formed in the face of the proximity head. The method includes moving the proximity head over the substrate so that an area of contact between the meniscus and the surface of the substrate moves from a first location to a second location on the substrate. The moving of the proximity head causes a chemical remainder to be left behind on the surface of the substrate at the first location. The chemical remainder being a layer of the chemical from the meniscus that adheres to the surface of the substrate. The method also includes balancing an amount of chemical being delivered to the proximity head with an amount of chemical removed from the meniscus so that the meniscus maintains a substantially constant volume of the chemical. The amount of chemical removed from the meniscus includes at least the chemical remainder left behind on the surface of the substrate.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATIONFREMONT CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
de, Larios John Palo Alto, US 22 227
Kabansky, Alex Santa Clara, US 7 120
Ravkin, Mike Sunnyvale, US 63 1167

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