Phase change memory cell having vertical channel access transistor
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United States of America Patent
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Nov 20, 2012
Grant Date -
Sep 8, 2011
app pub date -
May 18, 2011
filing date -
May 22, 2009
priority date (Note) -
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Abstract
A device includes a substrate having a first region and a second region. The first region comprises a first field effect transistor having a horizontal channel region within the substrate, a gate overlying the horizontal channel region, and a first dielectric covering the gate of the first field effect transistor. The second region of the substrate includes a second field effect transistor comprising a first terminal extending through the first dielectric to contact the substrate, a second terminal overlying the first terminal and having a top surface, and a vertical channel region separating the first and second terminals. The second field effect transistor also includes a gate on the first dielectric and adjacent the vertical channel region, the gate having a top surface that is co-planar with the top surface of the second terminal.
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