LED semiconductor element having increased luminance
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United States of America Patent
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Nov 20, 2012
Grant Date -
Sep 22, 2011
app pub date -
May 26, 2011
filing date -
Sep 28, 2006
priority date (Note) -
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Abstract
An LED semiconductor element including at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by a contact zone.
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