Variable ring width SDD
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United States of America Patent
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Nov 20, 2012
Grant Date -
Dec 16, 2010
app pub date -
Nov 12, 2009
filing date -
Jun 10, 2009
priority date (Note) -
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Abstract
A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.
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