Pillar structure having a non-planar surface for semiconductor devices
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United States of America Patent
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Nov 27, 2012
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app pub date -
Feb 11, 2010
filing date -
Feb 11, 2010
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Abstract
A conductive pillar for a semiconductor device is provided. The conductive pillar is formed such that a top surface is non-planar. In embodiments, the top surface may be concave, convex, or wave shaped. An optional capping layer may be formed over the conductive pillar to allow for a stronger inter-metallic compound (IMC) layer. The IMC layer is a layer formed between solder material and an underlying layer, such as the conductive pillar or the optional capping layer.
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