Semiconductor device
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United States of America Patent
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Nov 27, 2012
Grant Date -
Mar 25, 2010
app pub date -
Jul 21, 2006
filing date -
Jul 21, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A recording layer 52 made of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is used as a memory element RM in a memory cell region, and it is formed so that a concentration of Ga or In of a first layer 52a positioned on a lower electrode TP side of the recording layer 52 is higher than the corresponding concentration of a second layer 52b positioned on an upper electrode 53 side. For example, the recording layer is formed so that a content of Ga or In of the second layer is 5 atomic % or more smaller than that of the first layer. Also, a circuit which can reverse the voltage polarity between the upper electrode and the lower electrode in a set operation and a reset operation is provided.
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