Tunable gate electrode work function material for transistor applications
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United States of America Patent
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Nov 27, 2012
Grant Date -
Jun 10, 2010
app pub date -
Feb 12, 2010
filing date -
Dec 28, 2006
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Abstract
Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
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