Method and apparatus to form solar cell absorber layers with planar surface
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United States of America Patent
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Dec 4, 2012
Grant Date -
Jun 25, 2009
app pub date -
Dec 29, 2008
filing date -
Oct 13, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and a system are provided for forming planar absorber layers or structures by planarizing and reacting precursor layers in a reactor. A precursor structure is first formed over the front surface of a foil substrate and then planarized through application of pressure by a smooth surface while heated to a first temperature range to obtain a planar layer. The planar layer may be only partially reacted. The planar layer is further reacted at a second temperature range to form a fully or completely reacted planar absorber layer. The planar absorber layer may include at least one Group IB material, at least one Group IIIA material and at least one Group VIA material. The planar absorber layer may be a Group IBIIIAVIA compound layer.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SOLOPOWER SYSTEMS INC | 6308 NORTH MARINE DRIVE PORTLAND OR 97203 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Basol, Bulent M | Manhattan Beach, US | 242 | 5316 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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