Straight conductor blind via capture pad structure and fabrication method

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United States of America Patent

PATENT NO 8323771
SERIAL NO

11839277

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Abstract

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A capture pad structure includes a first dielectric layer. A trace is embedded within the first dielectric layer. A capture pad is also embedded within the first dielectric layer, the capture pad being an end portion of the trace. A blind via aperture extends partially through the first dielectric layer from a principal surface of the first dielectric layer to the capture pad. By forming the capture pad as the end portion of the trace, formation of the capture pad requires no change in direction or complex motion of the laser.

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Patent Owner(s)

Patent OwnerAddress
AMKOR TECHNOLOGY SINGAPORE HOLDING PTE LTDSINGAPORE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huemoeller, Ronald Patrick Chandler, US 132 4147
Rusli, Sukianto Phoenix, US 73 2570

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