Through via nub reveal method and structure
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United States of America Patent
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Dec 4, 2012
Grant Date -
N/A
app pub date -
Apr 6, 2010
filing date -
Apr 6, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
A method includes applying a backside passivation layer to an inactive surface of an electronic component and to enclose a through via nub protruding from the inactive surface. The method further includes laser ablating the backside passivation layer to reveal a portion of the through via nub. The backside passivation layer is formed of a low cost organic material. Further, by using a laser ablation process, the backside passivation layer is removed in a controlled manner to reveal the portion of the through via nub. Further, by using a laser ablation process, the resulting thickness of the backside passivation layer is set to a desired value in a controlled manner. Further, by using a laser ablation process, the fabrication cost is reduced as compared to the use of chemical mechanical polish.
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