Silicon carbide semiconductor device and method for manufacturing the same
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United States of America Patent
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Dec 4, 2012
Grant Date -
Apr 3, 2008
app pub date -
Oct 2, 2007
filing date -
Oct 3, 2006
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Abstract
A SiC semiconductor substrate is disclosed which includes a SiC single crystal substrate, a nitrogen (N)-doped n-type SiC epitaxial layer in which nitrogen (N) is doped and a phosphorus (P)-doped n-type SiC epitaxial layer in which phosphorus (P) is doped. The nitrogen (N)-doped n-type SiC epitaxial layer and the phosphorus (P)-doped n-type SiC epitaxial layer are laminated on the silicon carbide single crystal substrate sequentially. The nitrogen (N)-doped n-type SiC epitaxial layer and the phosphorus (P)-doped n-type SiC epitaxial layer are formed by using two or more different dopants, for example, nitrogen and phosphorus, at the time of epitaxial growth. Basal plane dislocations in a SiC device can be reduced.
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