Edge illuminated photodiodes

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United States of America Patent

PATENT NO 8324670
APP PUB NO 20100289105A1
SERIAL NO

12760342

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Abstract

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This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

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Patent Owner(s)

Patent OwnerAddress
OSI OPTOELECTRONICS INC12525 CHADRON AVENUE HAWTHORNE CA 90250

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, US 47 1033
Mansouri, Manoocher Studio City, US 5 142
Taneja, Narayan Dass Long Beach, US 47 1042

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