Stacked non-volatile memory device and methods for fabricating the same
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United States of America Patent
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Dec 4, 2012
Grant Date -
Oct 6, 2011
app pub date -
Jun 16, 2011
filing date -
Dec 9, 2005
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Abstract
A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.
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