Apparatus and method for providing resist alignment marks in a double patterning lithographic process
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United States of America Patent
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Dec 11, 2012
Grant Date -
Dec 23, 2010
app pub date -
Apr 27, 2010
filing date -
May 29, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
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