Techniques for forming thin films by implantation with reduced channeling

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United States of America Patent

PATENT NO 8329557
APP PUB NO 20100317140A1
SERIAL NO

12778989

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Abstract

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Embodiments of the present invention relate to the use of a particle accelerator beam to form thin films of material from a bulk substrate. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. Then, a thin film of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. To improve uniformity of depth of implantation, channeling effects are reduced by one or more techniques. In one technique, a miscut bulk substrate is subjected to the implantation, such that the lattice of the substrate is offset at an angle relative to the impinging particle beam. According to another technique, the substrate is tilted at an angle relative to the impinging particle beam. In still another technique, the substrate is subjected to a dithering motion during the implantation. These techniques may be employed alone or in combination.

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Patent Owner(s)

Patent OwnerAddress
SILICON GENESIS CORPORATION61 DAGGETT DRIVE SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brailove, Adam San Jose, US 12 1697
Henley, Francois J Aptos, US 178 9676
Lamm, Albert J Suisun City, US 7 92
Liu, Zuqin Palo Alto, US 24 886

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