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Abstract

Methods of forming ruthenium or ruthenium dioxide are provided. The methods may include using ruthenium tetraoxide (RuO₄) as a ruthenium precursor. In some embodiments for forming ruthenium, methods include forming a seed layer, and forming a ruthenium layer on the seed layer, using RuO₄. In other embodiments, methods include performing atomic layer deposition cycles, which include using RuO₄ and another ruthenium-containing co-precursor. In yet other embodiments, methods include adsorbing a reducing agent over a substrate, and supplying RuO₄ to be reduced to ruthenium by the adsorbed reducing agent. In other embodiments for forming ruthenium dioxide, methods may include providing an initial seed layer formed of, for example, an organic compound, and supplying RuO₄ over the seed layer.

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First Claim