Multi-level memory cell
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United States of America Patent
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Dec 11, 2012
Grant Date -
Sep 27, 2012
app pub date -
Mar 25, 2011
filing date -
Mar 25, 2011
priority date (Note) -
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Abstract
Some embodiments include a memory device and methods of forming the same. The memory device can include an electrode coupled to a memory element. The electrode can include different materials located at different portions of the electrode. The materials can create different dielectrics contacting the memory elements at different locations. Various states of the materials in the memory device can be used to represent stored information. Other embodiments are described.
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