Germanium-silicon-carbide floating gates in memories
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United States of America Patent
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Dec 11, 2012
Grant Date -
Aug 24, 2006
app pub date -
Feb 23, 2005
filing date -
Feb 23, 2005
priority date (Note) -
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Abstract
The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (poly) in fabricating floating gates in EEPROM and flash memory results in increased tunneling currents and faster erase operations. Forming the floating gate includes depositing germanium-silicon-carbide in various combinations to obtain the desired tunneling current values at the operating voltage of the memory device.
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