Germanium-silicon-carbide floating gates in memories

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United States of America Patent

PATENT NO 8330202
APP PUB NO 20060186458A1
SERIAL NO

11063825

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Abstract

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The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (poly) in fabricating floating gates in EEPROM and flash memory results in increased tunneling currents and faster erase operations. Forming the floating gate includes depositing germanium-silicon-carbide in various combinations to obtain the desired tunneling current values at the operating voltage of the memory device.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.;MICRO TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Kie Y Chappaqua, US 652 41431
Forbes, Leonard Corvallis, US 1219 61394

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