Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same
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United States of America Patent
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Dec 11, 2012
Grant Date -
Dec 24, 2009
app pub date -
Jun 26, 2009
filing date -
Aug 1, 2006
priority date (Note) -
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Abstract
A semiconductor device according to some embodiments includes a semiconductor layer having a first conductivity type and a surface in which an active region of the semiconductor device is defined. A plurality of spaced apart first doped regions are arranged within the active region. The plurality of first doped regions have a second conductivity type that is opposite the first conductivity type, have a first dopant concentration, and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of first doped regions are arranged as islands in the semiconductor layer. A second doped region in the semiconductor layer has the second conductivity type and has a second dopant concentration that is greater than the first dopant concentration.
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