BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER
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United States of America Patent
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Dec 11, 2012
Grant Date -
Dec 20, 2012
app pub date -
Jun 16, 2011
filing date -
Jun 16, 2011
priority date (Note) -
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Abstract
In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.
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