Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus
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United States of America Patent
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Dec 25, 2012
Grant Date -
Sep 27, 2012
app pub date -
Feb 23, 2012
filing date -
Mar 25, 2011
priority date (Note) -
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Abstract
The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.
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