Using unstable nitrides to form semiconductor structures
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United States of America Patent
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Jan 1, 2013
Grant Date -
Nov 10, 2011
app pub date -
Jul 18, 2011
filing date -
Feb 22, 2006
priority date (Note) -
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Abstract
Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
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