Selective floating body SRAM cell

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8349670
APP PUB NO 20110171790A1
SERIAL NO

13045756

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Abstract

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A memory cell has N≧6 transistors, in which two are access transistors, at least one pair [say (N−2)/2] are pull-up transistors, and at least another pair [say (N−2)/2] are pull-down transistors. The pull-up and pull-down transistors are all coupled between the two access transistors. Each of the access transistors and the pull-up transistors are the same type, p-type or n-type. Each of the pull-down transistors is the other type, p-type or n-type. The access transistors are floating body devices. The pull-down transistors are non-floating body devices. The pull-up transistors may be floating or non-floating body devices. Various specific implementations and methods of making the memory cell are also detailed.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES INCCAYMAN ISLANDS GRAND CAYMAN GRAND CAYMAN CAYMAN ISLANDS

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Josephine B Mahopac, US 263 5497
Chang, Leland New York, US 158 4809
Koester, Steven J Ossining, US 74 1940
Sleight, Jeffrey W Ridgefield, US 298 5388

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