High power semiconductor package
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United States of America Patent
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Jan 8, 2013
Grant Date -
Jul 10, 2008
app pub date -
Jan 4, 2008
filing date -
Jan 5, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is a high power semiconductor package including: an insulation substrate having first and second surfaces opposite to each other; an interconnection patterns formed on the first surface of the insulation substrate, the interconnection patterns including a plurality of first dimples; a power control semiconductor chip mounted on the first surface of the insulation substrate, the power control semiconductor chip electrically connected with the interconnection patterns; and an encapsulation member encapsulating the insulation substrate, the interconnection patterns, and the power control semiconductor chip and exposing at least a portion of the second surface of the insulation substrate.
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