Silicon germanium film formation method and structure

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United States of America Patent

PATENT NO 8354314
APP PUB NO 20120205749A1
SERIAL NO

13025474

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Epitaxial deposition of silicon germanium in a semiconductor device is achieved without using masks. Nucleation delays induced by interactions with dopants present before deposition of the silicon germanium are used to determine a period over which an exposed substrate surface may be subjected to epitaxial deposition to form a layer of SiGe on desired parts with substantially no deposition on other parts. Dopant concentration may be changed to achieve desired thicknesses within preferred deposition times. Resulting deposited SiGe is substantially devoid of growth edge effects.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chakravarti, Ashima B Hopewell Junction, US 41 2938
Dube, Abhishek Fishkill, US 81 2196
Schepis, Dominic J Wappingers Falls, US 148 5790

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