Microcavity light emitting diode method of manufacture

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United States of America Patent

PATENT NO 8354679
SERIAL NO

12569337

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A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electrical contact, where λ is the peak emission wavelength, n is the index of refraction at the peak emission wavelength, i is an integer, and each layer within the stack has a dislocation density below about 105 cm−2.

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Patent Owner(s)

  • SORAA, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
D'Evelyn, Mark P Goleta, US 107 10910
Sharma, Rajat Goleta, US 87 6678

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