Solid-state pinch off thyristor circuits

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United States of America Patent

PATENT NO 8354690
APP PUB NO 20110049561A1
SERIAL NO

12550574

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Abstract

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Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to receive a gate trigger current that, when the anode layer is positively biased relative to the cathode layer, causes the thyristor portion to latch into a conducting mode between the anode and the cathode. The device also includes a transistor portion formed on the thyristor portion, the transistor portion including a source, a drain and a transistor gate, the drain coupled to the cathode of the thyristor portion.

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Patent Owner(s)

  • CREE, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Callanan, Robert J Raleigh, US 8 246
Ryu, Sei-Hyung Cary, US 116 3708
Zhang, Qingchun Cary, US 98 3466

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