Field-effect device and manufacturing method thereof
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United States of America Patent
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Jan 15, 2013
Grant Date -
Feb 11, 2010
app pub date -
Aug 8, 2008
filing date -
Aug 8, 2008
priority date (Note) -
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Abstract
Embodiments relate to a field-effect transistor that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region of the first conductivity type, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.
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