Nonvolatile memory device and method with multiple verification pass voltages
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United States of America Patent
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Jan 22, 2013
Grant Date -
Dec 2, 2010
app pub date -
Apr 20, 2010
filing date -
May 29, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A nonvolatile memory device includes an operation voltage generation unit configured to generate a first pass voltage when a verification voltage is higher than a reference voltage and to generate a second pass voltage lower than the first pass voltage when the verification voltage is lower than the reference voltage.
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