Process for deposition of semiconductor films
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United States of America Patent
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Jan 29, 2013
Grant Date -
Jan 21, 2010
app pub date -
Jul 16, 2009
filing date -
Feb 12, 2001
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Abstract
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
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