Polishing slurry, method of producing same, and method of polishing substrate
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United States of America Patent
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Jan 29, 2013
Grant Date -
May 28, 2009
app pub date -
Dec 11, 2008
filing date -
Jul 28, 2004
priority date (Note) -
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Abstract
Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
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