Three dimensional nanoscale circuit interconnect and method of assembly by dielectrophoresis

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United States of America Patent

PATENT NO 8362618
APP PUB NO 20100038794A1
SERIAL NO

12513925

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Abstract

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An assembly of nanoelements forms a three-dimensional nanoscale circuit interconnect for use in microelectronic devices. A process for producing the circuit interconnect includes using dielectrophoresis by applying an electrical field across a gap between vertically displaced non-coplanar microelectrodes in the presence of a liquid suspension of nanoelements such as nanoparticles or single-walled carbon nanotubes to form a nanoelement bridge connecting the microelectrodes. The assembly process can be carried out at room temperature, is compatible with conventional semiconductor fabrication, and has a high yield. The current-voltage curves obtained from the nanoelement bridge demonstrate that the assembly is functional with a resistance of −40 ohms for gold nanoparticles. The method is suitable for making high density three-dimensional circuit interconnects, vertically integrated nanosensors, and for in-line testing of manufactured conductive nanoelements.

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Patent OwnerAddress
NORTHEASTERN UNIVERSITY360 HUNTINGTON AVENUE 900 RP CENTER FOR RESEARCH INNOVATION BOSTON MA 02115

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Busnaina, Ahmed Ashland, US 44 470
Chen, Chia-Ling Boston, US 9 84
Dokmeci, Mehmet R Brookline, US 2 8
Khanduja, Nishant Boston, US 1 8
Makaram, Prashanth Boston, US 13 90
Selvarasah, Selvapraba Malden, US 1 8
Xiong, Xugang Boston, US 9 42

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