Phase change memory having one or more non-constant doping profiles
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United States of America Patent
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Jan 29, 2013
Grant Date -
Dec 30, 2010
app pub date -
Mar 23, 2010
filing date -
Jun 25, 2009
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Abstract
A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of “non-constant” concentration profiles for additives enables doping the different zones with different materials and concentrations, according to the different crystallographic, thermal and electrical conditions, and different phase transition conditions.
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