Cyclical epitaxial deposition and etch
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United States of America Patent
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Feb 5, 2013
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app pub date -
Nov 17, 2009
filing date -
Nov 17, 2009
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Abstract
Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions.
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