Chip structure and process for forming the same
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United States of America Patent
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Feb 5, 2013
Grant Date -
Apr 26, 2012
app pub date -
Oct 19, 2011
filing date -
Dec 21, 1998
priority date (Note) -
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status (Latency Note)
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Abstract
A chip with a metallization structure and an insulating layer with first and second openings over first and second contact points of the metallization structure, a first circuit layer connecting the first and second contact points and comprising a first trace portion, first and second via portions between the first trace portion and the first and second contact points, the first circuit layer comprising a copper layer and a first conductive layer under the copper layer and at a sidewall of the first trace portion, and a second circuit layer comprising a second trace portion with a third via portion at a bottom thereof, wherein the second circuit layer comprises another copper layer and a second conductive layer under the other copper layer and at a sidewall of the second trace portion, and a second dielectric layer comprising a portion between the first and second circuit layers.
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