Memory device with improved performance

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United States of America Patent

PATENT NO 8373148
APP PUB NO 20080265240A1
SERIAL NO

11796073

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present resistive memory device includes first and second electrodes. An active layer is situated between the first and second electrodes. The active layer with advantage has a thermal conductivity of 0.02 W/Kcm or less, and is surrounded by a body in contact with the layer, the body having a thermal conductivity of 0.01 W/Kcm or less.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.;SPANSION LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bernard, Joffre F Santa Clara, US 16 125
Lan, Zhida San Jose, US 26 249
Rathor, Manuj Milpitas, US 23 292

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