Self-heating phase change memory cell architecture

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United States of America Patent

PATENT NO 8377741
APP PUB NO 20100163817A1
SERIAL NO

12346524

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Abstract

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A method for manufacturing a phase change memory includes forming a phase change memory cell by forming a phase change layer between two switching layers. The phase change layer is separated from thermal heat sinks, such as the bitline or wordline, by the switching layers.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS S R L20864 AGRATE BRIANZA (MB)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Karpov, Ilya Santa Clara, US 16 201
Savransky, Semyon D Newark, US 26 275

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