Non-volatile memory device and method of manufacturing the same
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United States of America Patent
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Feb 19, 2013
Grant Date -
Jun 21, 2012
app pub date -
Feb 10, 2012
filing date -
Apr 3, 2008
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Abstract
A multi-layered non-volatile memory device and a method of manufacturing the same. The non-volatile memory device may include a plurality of first semiconductor layers having a stack structure. A plurality of control gate electrodes may extend across the first semiconductor layers. A first body contact layer may extend across the first semiconductor layers. A plurality of charge storage layers may be interposed between the control gate electrodes and the first semiconductor layers.
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