Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing
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United States of America Patent
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Feb 26, 2013
Grant Date -
Nov 17, 2011
app pub date -
May 14, 2010
filing date -
May 14, 2010
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Abstract
A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate. The substrate includes a source/drain region and a photo cell collector region. The method further includes forming a non-uniform fixed charge distribution in the gate dielectric. The method further includes forming a gate structure on the gate dielectric.
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