Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
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United States of America Patent
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Feb 26, 2013
Grant Date -
Oct 29, 2009
app pub date -
Apr 25, 2008
filing date -
Apr 25, 2008
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Abstract
Methods of forming metal oxide thin films and related structures are provided. One embodiment of the methods includes conducting a plurality of cycles of deposition on a substrate. Each cycle includes supplying oxygen gas and an inert gas into a reaction space substantially continuously during the cycle. A metal precursor is supplied into the reaction space for a first duration. The metal precursor is a cyclopentadienyl compound of the metal. After the metal precursor is supplied, the continuously flowing oxygen gas is activated for a second duration to generate a plasma in the reaction space. The cycle is conducted at a temperature below about 400° C. The methods can be performed after forming a structure on the substrate, wherein the structure is formed of a material which is physically and/or chemically unstable at a high temperature.
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