Semiconductor memory device and decoding method

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United States of America Patent

PATENT NO 8385117
APP PUB NO 20120224420A1
SERIAL NO

13233530

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Abstract

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A memory card decodes three bits of data stored in one memory cell and belonging to different pages, each being a unit of reading, by iterative calculation using probability based on eight threshold voltage distributions. The memory card includes a word line controlling section configured to select one required to read 1-bit data belonging to one of the pages to be read from among seven voltage sets which are composed of seven reference voltages for hard bit reading and a plurality of intermediate voltages for soft bit reading and perform control to apply the voltages of the selected voltage set as read voltages to the memory cell, a log likelihood ratio table storing section, and a decoder configured to decode read data using a log likelihood ratio.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sakurada, Kenji Kanagawa, JP 27 459
Uchikawa, Hironori Kanagawa, JP 86 1124

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