Structure and method for biasing phase change memory array for reliable writing
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United States of America Patent
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Feb 26, 2013
Grant Date -
Dec 22, 2011
app pub date -
Aug 30, 2011
filing date -
Jan 19, 2005
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Abstract
A memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state. Thus leakage is low and assurance is high that no unselected memory cells are disturbed. In order to avoid disturbing unselected memory cells during sequential writing, previously selected word and bit lines are brought to their unselected voltages before new bit lines and word lines are selected. A modified current mirror structure controls state switching of the phase change material.
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