High normality solution for removing freeze material in lithographic applications
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United States of America Patent
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Mar 5, 2013
Grant Date -
Mar 24, 2011
app pub date -
Sep 22, 2009
filing date -
Sep 22, 2009
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Abstract
A method for patterning a substrate is described. The method comprises forming a layer of radiation-sensitive material on the substrate, preparing a pattern in the layer of radiation-sensitive material, and applying a chemical freeze layer over the layer of radiation-sensitive material to form a frozen layer of radiation-sensitive material. Thereafter, the method comprises stripping the chemical freeze layer using a high normality strip solution to preserve the pattern in the frozen layer of radiation-sensitive material, wherein the high normality strip solution contains an active solute having a normality (N) greater than 0.26.
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