Method for making a stressed structure designed to be dissociated

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8389379
APP PUB NO 20100167499A1
SERIAL NO

12628772

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of making a complex microelectronic structure by assembling two substrates through two respective linking surfaces, the structure being designed to be dissociated at a separation zone. Prior to assembly, in producing a state difference in the tangential stresses between the two surfaces to be assembled, the state difference is selected so as to produce in the assembled structure a predetermined stress state at the time of dissociation.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
COMMISSARIAT A L'ENERGIE ATOMIQUE31/33 RUE DE LA FEDERATION 75015 PARIS

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fournel, Franck Moirans, FR 31 449
Lagahe, Christelle Saint Joseph de Riviere, FR 4 68
Moriceau, Hubert Saint-Egreve, FR 93 2315

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation