Semiconductor device and method for manufacturing the same
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United States of America Patent
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Mar 5, 2013
Grant Date -
Sep 13, 2012
app pub date -
Oct 27, 2011
filing date -
Mar 7, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a first substrate and a second substrate being bonded to each other, a posterior interconnect layer interposed between the first and second substrates, a weld pad disposed in the posterior interconnect layer, and a first annular opening disposed in the first substrate. The device further includes a dielectric layer formed in the first opening, a via surrounded by the first annular opening, and an interconnect layer disposed in the via. The device also includes a conductive bump disposed on the interconnect layer and electrically connected to the weld pad through the interconnect layer.
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