Memory using tunneling field effect transistors
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United States of America Patent
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Mar 5, 2013
Grant Date -
Apr 21, 2011
app pub date -
Dec 22, 2010
filing date -
May 22, 2006
priority date (Note) -
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Abstract
A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including a second drain and sharing the first source, the second drain coupled to a second resistive memory element. The memory includes a first region coupled to the first source for providing a source node.
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