Semiconductor light emitting device and method of fabricating semiconductor light emitting device

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United States of America Patent

PATENT NO 8390012
APP PUB NO 20110220934A1
SERIAL NO

12874568

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Abstract

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A semiconductor light emitting device has a support substrate, a light emitting element, and underfill material. The light emitting element includes a nitride-based group III-V compound semiconductor layer contacted via a bump on the support substrate. The underfill material is disposed between the support substrate and the light emitting element, the underfill material comprising a rib portion disposed outside of an end face of the light emitting element to surround the end surface of the light emitting element.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gotoda, Toru Yokohama, JP 20 195
Nago, Hajime Yokohama, JP 72 405
Nunoue, Shinya Ichikawa, JP 312 3280
Oka, Toshiyuki Yokohama, JP 64 621
Zaima, Kotaro Tokyo, JP 30 211

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