Active-matrix field emission pixel

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United States of America Patent

PATENT NO 8390538
APP PUB NO 20120097958A1
SERIAL NO

13244078

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Abstract

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A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.

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Patent Owner(s)

Patent OwnerAddress
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE218 GAJEONG-RO YUSEONG-GU DAEJEON 34129 34129

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Jin Woo Daegu, KR 45 257
Kang, Kwang Yong Daejeon, KR 39 835
Kim, Dae Jun Daejeon, KR 34 161
Lee, Jin Ho Daejeon, KE 905 7012
Song, Yoon Ho Daejeon, KR 48 306

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